5秒后页面跳转
HMN1M8DVN-150I PDF预览

HMN1M8DVN-150I

更新时间: 2024-11-12 03:19:43
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 95K
描述
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V

HMN1M8DVN-150I 数据手册

 浏览型号HMN1M8DVN-150I的Datasheet PDF文件第2页浏览型号HMN1M8DVN-150I的Datasheet PDF文件第3页浏览型号HMN1M8DVN-150I的Datasheet PDF文件第4页浏览型号HMN1M8DVN-150I的Datasheet PDF文件第5页浏览型号HMN1M8DVN-150I的Datasheet PDF文件第6页浏览型号HMN1M8DVN-150I的Datasheet PDF文件第7页 
HANBit  
HMN1M8DVN  
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin DIP, 3.3V  
HMN1M8DVN  
Part No.  
GENERAL DESCRIPTION  
The HMN1M8DVN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.  
The HMN1M8DVN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited  
write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is  
switched on to sustain the memory until after VCC returns valid.  
The HMN1M8DVN uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide  
non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
PIN ASSIGNMENT  
w Access time : 70, 85, 120, 150 ns  
w High-density design : 8Mbit Design  
DU  
DU  
1
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
w Battery internally isolated until power is applied  
w Industry-standard 40-pin 1,024K x 8 pinout  
w Unlimited write cycles  
2
VCC  
A19  
NC  
A15  
A17  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DU  
NC  
NC  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
3
4
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
5
6
7
8
9
w Data is automatically protected during power loss  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
DU  
OPTIONS  
w Timing  
70 ns  
MARKING  
- 70  
- 85  
-100  
-150  
85 ns  
40-pin Encapsulated Package  
120 ns  
150 ns  
1
URL:www.hbe.co.kr  
Rev.0.0 (January/ 2003)  
HANBit Electronics Co.,Ltd  

与HMN1M8DVN-150I相关器件

型号 品牌 获取价格 描述 数据表
HMN1M8DVN-70 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V
HMN1M8DVN-70I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V
HMN1M8DVN-85 HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V
HMN1M8DVN-85I HANBIT

获取价格

Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin ? DIP, 3.3V
HMN2568D HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-120 HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-120I HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-150 HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-150I HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-70 HANBIT

获取价格

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V