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HMN2M8D-70 PDF预览

HMN2M8D-70

更新时间: 2024-09-24 03:42:19
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 174K
描述
Non-Volatile SRAM MODULE 16Mbit (2,048K x 8-Bit), 36Pin-DIP, 5V

HMN2M8D-70 数据手册

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HANBit  
HMN2M8D  
Non-Volatile SRAM MODULE 16Mbit (2,048K x 8-Bit), 36Pin-DIP, 5V  
Part No. HMN2M8D  
GENERAL DESCRIPTION  
The HMN2M8D Nonvolatile SRAM is a 16,777,216-bit static RAM organized as 2,097,152 bytes by 8 bits.  
The HMN2M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write  
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is  
switched on to sustain the memory until after VCC returns valid.  
The HMN2M8D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
PIN ASSIGNMENT  
w Access time : 70, 85, 120, 150ns  
w High-density design : 16Mbit Design  
1
2
3
4
36  
35  
34  
33  
VCC  
A19  
NC  
A20  
A18  
A16  
A14  
A12  
w Battery internally isolated until power is applied  
w Industry-standard 36-pin 2,048K x 8 pinout  
w Unlimited write cycles  
NC  
A15  
A17  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
w Data retention in the absence of VCC  
w 5-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
A7  
A6  
A5  
A4  
A3  
A2  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
w Data is automatically protected during power loss  
w Industrial temperature operation  
w Timing  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
70 ns  
85 ns  
- 70  
- 85  
-100  
-150  
120 ns  
150 ns  
36-pin Encapsulated Package  
URL : www.hbe.co.kr  
Rev. 1.0 (May, 2002)  
1
HANBit Electronics Co.,Ltd  

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