HMN4M8D-120

更新时间： 2024-09-24 03:42:19

品牌	Logo	应用领域
HANBIT		存储内存集成电路静态存储器
页数	文件大小	规格书
9页	172K
描述
Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

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中文翻译

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技术参数
数据手册

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HMN4M8D-120 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Is Samacsys：	N	Base Number Matches：	1

HMN4M8D-120 数据手册

HANBit

HMN4M8D

Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

Part No. HMN4M8D

GENERAL DESCRIPTION

The HMN4M8D Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits.

The HMN4M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-

tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the

memory until after V_CCreturns valid and write protection is unconditionally enabled to prevent garbled data. In addition the

SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is

switched on to sustain the memory until after V_CCreturns valid.

The HMN4M8D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-

volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

PIN ASSIGNMENT

w Access time : 70, 85, 120, 150 ns

w High-density design : 32Mbit Design

w Battery internally isolated until power is applied

w Industry-standard 40-pin 4,096K x 8 pinout

w Unlimited write cycles

V_CC

A¹⁹

A²¹

A²⁰

A¹⁸

A¹⁶

A¹⁴

A¹²

A¹⁵

A¹⁷

/WE

A¹³

A⁸

A⁹

A₁₁

/OE

A¹⁰

/CE

DQ₇

DQ⁶

DQ₅

DQ₄

DQ³

w Data retention in the absence of V_CC

w 5-years minimum data retention in absence of power

w Automatic write-protection during power-up/power-down

cycles

A⁷

A⁶

A⁵

A₄

A₃

A²

w Data is automatically protected during power loss

w Industrial temperature operation

A₁

A⁰

DQ₀

DQ₁

DQ₂

V^SS

OPTIONS

w Timing

70 ns

MARKING

- 70

- 85

-100

-150

85 ns

40-pin Encapsulated Package

120 ns

150 ns

URL : www.hbe.co.kr

Rev. 1.0 (May, 2002)

HANBit Electronics Co.,Ltd

12 3 4 5 6 7...9

中文翻译

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与HMN4M8D-120相关器件

型号	品牌	获取价格	描述	数据表
HMN4M8D-120I	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-150	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-150I	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-70	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-70I	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-85	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8D-85I	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V
HMN4M8DN	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V
HMN4M8DV	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V
HMN4M8DV-120	HANBIT	获取价格	Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V

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