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HMN4M8DVN-120

更新时间： 2024-09-24 03:19:43
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 182K
描述
Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V

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HMN4M8DVN-120 数据手册

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HANBit  
HMN4M8DV(N)  
Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V  
Part No. HMN4M8DV(N)  
GENERAL DESCRIPTION  
The HMN4M8DV Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits.  
The HMN4M8DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited write  
cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source  
is switched on to sustain the memory until after VCC returns valid.  
The HMN4M8DV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non -  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
PIN ASSIGNMENT  
w Access time : 55, 70ns  
NC  
NC  
1
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
w High-density design : 32Mbit  
Design  
VCC  
A19  
2
VCC  
A19  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
A21  
A20  
A18  
A16  
A14  
A12  
A21  
A20  
A18  
A16  
A14  
A12  
2
3
w Battery internally isolated until  
power is applied  
3
4
NC  
A15  
A17  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
NC  
A15  
A17  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
NC  
4
5
5
6
w Industry-standard 40-pin 4,096K  
x 8 pinout  
6
7
7
8
A7  
A6  
A5  
A4  
A3  
A2  
A7  
A6  
A5  
A4  
A3  
A2  
w Unlimited write cycles  
w Data retention in the absence of  
VCC  
8
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
10  
11  
12  
13  
14  
15  
16  
17  
18  
w 5-years minimum data retention  
in absence of power  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
A1  
A0  
DQ0  
DQ1  
DQ2  
w Automatic write-protection during  
power-up/power-down cycles  
w Data is automatically protected  
during power loss  
DQ3 VSS  
NC  
36-pin Encapsulated Package  
40-pin Encapsulated Package  
w Package Option  
- HMN4M8DV  
- 36 Pin DIP Package  
- 40 Pin DIP Package  
- HMN4M8DVN  
URL : www.hbe.co.kr  
Rev. 1.0 (May, 2002)  
1
HANBit Electronics Co.,Ltd  
1234567...9

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