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HMN2568D-150I PDF预览

HMN2568D-150I

更新时间: 2024-11-12 03:05:31
品牌 Logo 应用领域
HANBIT 静态存储器
页数 文件大小 规格书
9页 184K
描述
Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V

HMN2568D-150I 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.69
Base Number Matches:1

HMN2568D-150I 数据手册

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HANBit  
HMN2568D  
Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V  
Part No. HMN2568D  
GENERAL DESCRIPTION  
The HMN2568D Nonvolatile SRAM is a 2,097,152-bit static RAM organized as 262,144 bytes by 8 bits.  
The HMN2568D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write  
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is  
switched on to sustain the memory until after VCC returns valid.  
The HMN2568D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
w Access time : 70, 85, 120, 150 ns  
PIN ASSIGNMENT  
w High-density design : 2Mbit Design  
w Battery internally isolated until power is applied  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
1
2
3
4
32  
31  
30  
29  
VCC  
A15  
A17  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
w Industry-standard 32-pin 256K x 8 pinout  
w Unlimited write cycles  
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
9
w Data is automatically protected during power loss  
w Conventional SRAM operation; unlimited write cycles  
10  
11  
12  
13  
14  
15  
16  
OPTIONS  
w Timing  
70 ns  
MARKING  
32-pin Encapsulated Package  
- 70  
- 85  
85 ns  
120 ns  
-120  
-150  
150 ns  
URL : www.hbe.co.kr  
Rev. 0.0 (April, 2002)  
1
HANBit Electronics Co.,Ltd  

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