Datasheet > HMN2568D-70I

HMN2568D-70I

更新时间： 2024-11-12 03:05:31

品牌	Logo	应用领域
HANBIT		静态存储器
页数	文件大小	规格书
9页	184K
描述
Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMN2568D-70I 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

HMN2568D-70I 数据手册

HANBit

HMN2568D

Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V

_{Part No}. HMN2568D

GENERAL DESCRIPTION

The HMN2568D Nonvolatile SRAM is a 2,097,152-bit static RAM organized as 262,144 bytes by 8 bits.

The HMN2568D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-

tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the

memory until after V_CCreturns valid and write protection is unconditionally enabled to prevent garbled data. In addition the

SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is

switched on to sustain the memory until after V_CCreturns valid.

The HMN2568D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-

volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

w Access time : 70, 85, 120, 150 ns

PIN ASSIGNMENT

w High-density design : 2Mbit Design

w Battery internally isolated until power is applied

A¹⁶

A¹⁴

A¹²

A⁷

A⁶

A⁵

A₄

A₃

A²

A¹

A⁰

DQ₀

DQ₁

DQ²

V_SS

V_CC

A¹⁵

A¹⁷

/WE

A¹³

A₈

A₉

A₁₁

/OE

A₁₀

/CE

DQ₇

DQ⁶

DQ₅

DQ₄

DQ₃

w Industry-standard 32-pin 256K x 8 pinout

w Unlimited write cycles

w Data retention in the absence of V_CC

w 10-years minimum data retention in absence of power

w Automatic write-protection during power-up/power-down

cycles

w Data is automatically protected during power loss

w Conventional SRAM operation; unlimited write cycles

OPTIONS

w Timing

70 ns

MARKING

32-pin Encapsulated Package

- 70

- 85

85 ns

120 ns

-120

-150

150 ns

URL : www.hbe.co.kr

Rev. 0.0 (April, 2002)

HANBit Electronics Co.,Ltd

12 3 4 5 6 7...9

中文翻译

下载PDF

与HMN2568D-70I相关器件

型号	品牌	获取价格	描述	数据表
HMN2568D-85	HANBIT	获取价格	Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN2568D-85I	HANBIT	获取价格	Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
HMN28D	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-120	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-120I	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-150	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-150I	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-70	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-70I	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
HMN28D-85	HANBIT	获取价格	Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V

与HMN2568D-70I相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

HMN2568D-70I

HMN2568D-70I 技术参数

HMN2568D-70I 数据手册

与HMN2568D-70I相关器件

与HMN2568D-70I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMN2568D-70I

HMN2568D-70I 技术参数

HMN2568D-70I 数据手册

与HMN2568D-70I相关器件

与HMN2568D-70I相关文章

您还可以找

您在本页遇到什么问题？