18.10 GHz to 26.60 GHz Quadband VCO
HMC8364
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Set of 4 narrow-band VCOs with consistent sensitivity vs.
frequency
RF and tuning ports common to all 4 VCOs
RF output operates from fundamental oscillators with no
subharmonic oscillations
Up to 4 dBm RF output power
Power mute capability
NIC
GND
NIC
1
2
NIC
30
29
18.10GHz TO
20.10GHz
VC1
3
28 GND
27
26
V
TUNE
GND
RFOUT
GND
NIC
4
19.90GHz TO
22.30GHz
5
GND
No external resonator required
40-lead, 6 mm × 6 mm LFCSP
25 VC2
6
22.10GHz TO
24.10GHz
24
23
22
21
7
GND
VC3
VC4
NIC
APPLICATIONS
8
VCB
NIC
NIC
23.90GHz TO
26.60GHz
9
Electronic test and measurement
Industrial and medical instrumentation
Point to point and multipoint radios
Aerospace and defense
10
HMC8364
PACKAGE
BASE
Wireless communication infrastructure
GND
Figure 1.
GENERAL DESCRIPTION
The HMC8364 is a gallium arsenide (GaAs), quadband, mono-
lithic microwave integrated circuit (MMIC), voltage controlled
oscillator (VCO) designed to offer wideband frequency capabilities
without compromising phase noise performance. The device inte-
grates four independent, narrow-band VCOs with overlapping
frequency bands, operating at a fundamental frequency range
of 18.10 GHz to 26.60 GHz. The consistent tuning sensitivity
across all frequency bands simplifies the synthesizer loop filter
design.
The HMC8364 integrates resonators, negative resistance devices,
and varactor diodes. The monolithic structure of the oscillator
offers very low phase noise, optimal temperature stability, and
is immune to vibration and process variation.
The four VCOs are packaged in a single, 6 mm × 6 mm,
surface-mount lead frame chip scale package (LFCSP), and
require no external matching components.
Combined with a high frequency, high performance PLL, the
ADF41513, the HMC8364 offers a complete RF or microwave
frequency generation solution.
The tuning port is common to all VCO cores for a simpler
design of the phase-locked loop (PLL) feedback path. The
HMC8364 also offers a low typical current consumption of
99 mA for power sensitive applications.
Rev. A
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