Datasheet > HMC8400-SX

HMC8400-SX

更新时间： 2024-11-20 01:16:43

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
15页	312K
描述
MMIC Low Noise Amplifier

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数据手册

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HMC8400-SX 数据手册

2 GHz to 30 GHz, GaAs

pHEMT MMIC Low Noise Amplifier

Data Sheet

HMC8400

FEATURES

GENERAL DESCRIPTION

Output power for 1 dB compression (P1dB): 14.5 dBm typical

Saturated output power (P_SAT): 17 dBm typical

Gain: 13.5 dB typical

Noise figure: 2 dB

Output third-order intercept (IP3): 26.5 dBm typical

Supply voltage: 5 V at 67 mA

The HMC8400 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC). The HMC8400 is a wideband low

noise amplifier that operates between 2 GHz and 30 GHz. The

amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm

output IP3, and 14.5 dBm of output power at 1 dB gain compres-

sion, requiring 67 mA from a 5 V supply. The HMC8400 is self

biased with only a single positive supply needed to achieve a

drain current I_DDof 67 mA. The HMC8400 also has a gain control

option, V_GG2. The HMC8400 amplifier input/outputs are internally

matched to 50 Ω and dc blocked, facilitating integration into

multichip modules (MCMs). All data is taken with the chip

connected via two 0.025 mm (1 mil) wire bonds of minimal

length 0.31 mm (12 mils).

50 Ω matched input/output

Die size: 2.7 mm × 1.35 mm × 0.05 mm

APPLICATIONS

Test instrumentation

Microwave radios and very small aperture terminals (VSATs)

Military and space

Telecommunications infrastructure

Fiber optics

FUNCTIONAL BLOCK DIAGRAM

HMC8400

RFOUT

RFIN

Figure 1.

Rev. B

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