HMC657

更新时间： 2024-02-11 07:50:12

品牌	Logo	应用领域
HITTITE		射频和微波射频衰减器微波衰减器
页数	文件大小	规格书
8页	339K
描述
WIDEBAND FIXED ATTENUATOR FAMILY, DC - 50 GHz

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技术参数
数据手册

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HMC657 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.69	Is Samacsys：	N
标称衰减：	15 dB	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	25.05 dBm
JESD-609代码：	e4	最大工作频率：	50000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-55 °C	封装等效代码：	DIE OR CHIP
射频/微波设备类型：	FIXED ATTENUATOR	子类别：	RF/Microwave Attenuators
技术：	GAAS	端子面层：	Gold (Au)
Base Number Matches：	1

HMC657 数据手册

HMC650 TO HMC658

v01.0308

WIDEBAND FIXED ATTENUATOR FAMILY, DC - 50 GHz

HMC650 / 651 / 652 / 653 / 654 / 655 / 656 / 657 / 658

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with

conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

0.102mm (0.004”) Thick GaAs MMIC

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina

thin ﬁlm substrates are recommended for bringing RF to and from the chip

(Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be

used, the die should be raised 0.150mm (6 mils) so that the surface of

the die is coplanar with the surface of the substrate. One way to accom-

plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)

thick molybdenum heat spreader (moly-tab) which is then attached to the

ground plane (Figure 2).

Wire Bond

0.076mm

(0.003”)

RF Ground Plane

Microstrip substrates should brought as close to the die as possible in

order to minimize bond wire length. Typical die-to-substrate spacing is

0.076mm to 0.152 mm (3 to 6 mils).

0.127mm (0.005”) Thick Alumina

Thin Film Substrate

Figure 1.

Handling Precautions

Follow these precautions to avoid permanent damage.

0.102mm (0.004”) Thick GaAs MMIC

Storage: All bare die are placed in either Waffle or Gel based ESD protec-

tive containers, and then sealed in an ESD protective bag for shipment.

Once the sealed ESD protective bag has been opened, all die should be

stored in a dry nitrogen environment.

Wire Bond

0.076mm

(0.003”)

Cleanliness: Handle the chips in a clean environment. DO NOT attempt

to clean the chip using liquid cleaning systems.

RF Ground Plane

Static Sensitivity: Follow ESD precautions to protect against ESD

strikes.

0.150mm (0.005”) Thick

Moly Tab

Transients: Suppress instrument and bias supply transients while bias

is applied. Use shielded signal and bias cables to minimize inductive

pick-up.

0.254mm (0.010”) Thick Alumina

Thin Film Substrate

Figure 2.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The

surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.

The mounting surface should be clean and ﬂat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool

temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO

NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of

scrubbing should be required for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed

around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage

temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-

mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on

the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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与HMC657相关器件

型号	品牌	获取价格	描述	数据表
HMC657-Die	ADI	获取价格	固定、15 dB无源衰减器芯片，DC - 50 GHz
HMC657LP2	HITTITE	获取价格	Fixed Attenuator, 0MHz Min, 25000MHz Max, 2 X 2 MM, PLASTIC, SMT, 6 PIN
HMC657LP2	ADI	获取价格	固定无源SMT衰减器，DC - 25 GHz
HMC657LP2E	HITTITE	获取价格	WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz
HMC657LP2ETR	HITTITE	获取价格	Fixed Attenuator
HMC657LP2TR	HITTITE	获取价格	Fixed Attenuator
HMC658	HITTITE	获取价格	WIDEBAND FIXED ATTENUATOR FAMILY, DC - 50 GHz
HMC658-Die	ADI	获取价格	固定、20 dB无源衰减器芯片，DC - 50 GHz
HMC658LP2	HITTITE	获取价格	WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz HMC656LP2E / HMC657LP2E / HMC658LP2E
HMC658LP2	ADI	获取价格	固定无源SMT衰减器，DC - 25 GHz

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