HMC659
v01.0708
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Typical Applications
Features
The HMC659 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
P1dB Output Power: +26.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
3
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +8V supply. Gain flatness is excellent at 0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6
19.1
0.5
Max.
Min.
Typ.
6 - 11
18.5
0.15
0.018
17
Max.
Min.
Typ.
11 - 15
17.8
0.6
Max.
Units
GHz
dB
Gain
16.1
15.5
14.8
Gain Flatness
dB
Gain Variation Over Temperature
Input Return Loss
0.013
19
0.025
15
dB/ °C
dB
Output Return Loss
18
17
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
23
25.5
26
24
26.5
27
22.5
25
dBm
dBm
dBm
dBc
27
35
32
29
2.5
2
3
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
300
300
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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