HMC659LC5
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Typical Applications
Features
The HMC659LC5 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
P1dB Output Power: +27.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
6
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5x5mm SMT Package: 25mm2
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC659LC5 is a GaAs MMIC PHEMT Dis-
tributed Power Amplifier which is housed in a leadless
5x5 mm RoHS compliant ceramic SMT package
operating between DC and 15 GHz. The amplifier
provides 19 dB of gain, +35 dBm output IP3 and
+27.5 dBm of output power at 1 dB gain compression,
while requiring 300mA from a +8V supply. Gain flat-
ness is excellent at 1.4 dB from DC - 15 GHz making
the HMC659LC5 ideal for EW, ECM, Radar and test
equipment applications. The HMC659LC5 amplifier
I/Os are internally matched to 50 ohms with no ex-
ternal components. The HMC659LC5 is compatible
with high volume surface mount manufacturing
techniques.
Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6
19
Max.
Min.
Typ.
6 - 11
18
Max.
Min.
Typ.
11 - 15
17
Max.
Units
GHz
dB
Gain
16
15
14
Gain Flatness
0.7
0.4
0.7
dB
Gain Variation Over Temperature
Input Return Loss
0.015
20
0.019
18
0.022
17
dB/ °C
dB
Output Return Loss
19
20
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
23.5
26.5
28.0
35
24.5
27.5
28.5
32
23.5
26.5
27.5
29
dBm
dBm
dBm
dB
3.0
2.5
3.5
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
300
300
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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