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HMC659LC5TR PDF预览

HMC659LC5TR

更新时间: 2024-11-25 13:08:23
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
8页 288K
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HMC659LC5TR 数据手册

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HMC659LC5  
v01.0308  
GaAs PHEMT MMIC  
POWER AMPLIFIER, DC - 15 GHz  
Typical Applications  
Features  
The HMC659LC5 wideband PA is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space  
P1dB Output Power: +27.5 dBm  
Gain: 19 dB  
Output IP3: +35 dBm  
6
Supply Voltage: +8V @ 300 mA  
50 Ohm Matched Input/Output  
32 Lead Ceramic 5x5mm SMT Package: 25mm2  
• Test Instrumentation  
• Fiber Optics  
Functional Diagram  
General Description  
The HMC659LC5 is a GaAs MMIC PHEMT Dis-  
tributed Power Amplifier which is housed in a leadless  
5x5 mm RoHS compliant ceramic SMT package  
operating between DC and 15 GHz. The amplifier  
provides 19 dB of gain, +35 dBm output IP3 and  
+27.5 dBm of output power at 1 dB gain compression,  
while requiring 300mA from a +8V supply. Gain flat-  
ness is excellent at 1.4 dB from DC - 15 GHz making  
the HMC659LC5 ideal for EW, ECM, Radar and test  
equipment applications. The HMC659LC5 amplifier  
I/Os are internally matched to 50 ohms with no ex-  
ternal components. The HMC659LC5 is compatible  
with high volume surface mount manufacturing  
techniques.  
Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
DC - 6  
19  
Max.  
Min.  
Typ.  
6 - 11  
18  
Max.  
Min.  
Typ.  
11 - 15  
17  
Max.  
Units  
GHz  
dB  
Gain  
16  
15  
14  
Gain Flatness  
0.7  
0.4  
0.7  
dB  
Gain Variation Over Temperature  
Input Return Loss  
0.015  
20  
0.019  
18  
0.022  
17  
dB/ °C  
dB  
Output Return Loss  
19  
20  
15  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
23.5  
26.5  
28.0  
35  
24.5  
27.5  
28.5  
32  
23.5  
26.5  
27.5  
29  
dBm  
dBm  
dBm  
dB  
3.0  
2.5  
3.5  
Supply Current  
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)  
300  
300  
300  
mA  
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
6 - 332  

HMC659LC5TR 替代型号

型号 品牌 替代类型 描述 数据表
HMC659LC5 HITTITE

完全替代

GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

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