Datasheet > HMC633LC4TR

HMC633LC4TR

更新时间： 2024-02-13 07:34:15

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
8页	336K
描述
Wide Band Low Power Amplifier, 1 Func, GAAS,

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HMC633LC4TR 技术参数

HMC633LC4

v03.0514

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 5.5 - 17 GHz

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80

MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-

6. ALL GROUND LEADS AND GROUND PADDLE MUST

BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

HMC633LC4

Package Body Material

Alumina, White

Lead Finish

MSL Rating

MSL3 ^[1]

Package Marking ^[2]

H633

XXXX

Gold over Nickel

[1] Max peak reﬂow temperature of 260 °C

[2] 4-Digit lot number XXXX

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

1 2 3 456 7 8

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