Datasheet > HMC1131LC4

HMC1131LC4

更新时间： 2024-09-13 19:54:31

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
14页	283K
描述
GaAs, pHEMT, MMIC, Medium Power Amplifier, 24 GHz to 35 GHz

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HMC1131LC4 数据手册

GaAs, pHEMT, MMIC, Medium Power

Amplifier, 24 GHz to 35 GHz

Data Sheet

HMC1131

FEATURES

FUNCTIONAL BLOCK DIAGRAM

High saturated output power (P_SAT): 25 dBm

High output third-order intercept (IP3): 35 dBm

High gain: 22 dB (24 GHz to 27 GHz)

High output power for 1 dB compression (P1dB): 24 dBm

DC supply: 5 V at 225 mA

NIC

GND

RFIN

GND

NIC

GND

RFOUT

GND

NIC

Compact 24-lead, 4 mm × 4 mm LCC package

1.5kΩ

APPLICATIONS

HMC1131

Point-to-point radios

Point-to-multipoint radios

VSAT and SATCOM

NIC

PACKAGE

BASE

Figure 1.

GENERAL DESCRIPTION

The HMC1131 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transfer (pHEMT), monolithic microwave

integrated circuit (MMIC), driver amplifier that operates from

24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the

24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of

output power at 1 dB gain compression, while requiring 225 mA

from a 5 V supply.

The HMC1131 is capable of supplying 25 dBm of saturated output

power and is housed in a compact, 4 mm × 4 mm ceramic

leadless chip carrier (24-lead LCC). The HMC1131 is an ideal

driver amplifier for a wide range of applications, including

point-to-point radios, from 24 GHz to 35 GHz.

Rev. B

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rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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