Datasheet > HMC1132

HMC1132

更新时间： 2022-02-26 12:09:53

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
15页	694K
描述
No external matching required

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HMC1132 数据手册

1 Watt, GaAs pHEMT MMIC

Power Amplifier, 27 GHz to 32 GHz

HMC1132

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Saturated output power (P_SAT): 30.5 dBm at 22% power

added efficiency (PAE)

High output IP3: 35 dBm

High gain: 22 dB

DC supply: 6 V at 600 mA

No external matching required

32-lead, 5 mm × 5 mm LFCSP package

GND

24 GND

23 NC

HMC1132

21 GND

GND

RFIN

GND

RFOUT

GND

18 NC

17 GND

GND

APPLICATIONS

Point-to-point radios

Point-to-multipoint radios

VSAT and SATCOM

PACKAGE

BASE

Figure 1.

Military and space

GENERAL DESCRIPTION

systems. The amplifier configuration and high gain make it an

excellent candidate for last stage signal amplification before the

antenna.

The HMC1132 is a four-stage, GaAs pHEMT MMIC, 1 watt

power amplifier that operates between 27 GHz and 32 GHz.

The HMC1132 provides 22 dB of gain and 30.5 dBm of

saturated output power at 22% PAE from a 6 V power supply.

The HMC1132 amplifier input/outputs (I/Os) are internally

matched to 50 Ω. The device is supplied in a compact, leadless

QFN, 5 mm × 5 mm surface-mount package.

The HMC1132 exhibits excellent linearity and it is optimized

for high capacity, point-to-point and point-to-multipoint radio

Rev. 0

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks are theproperty of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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