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HMC1132PM5ETR PDF预览

HMC1132PM5ETR

更新时间: 2024-02-27 13:31:50
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
17页 363K
描述
HMC1132PM5ETR

HMC1132PM5ETR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active针数:32
Reach Compliance Code:compliant风险等级:5.67
特性阻抗:50 Ω构造:COMPONENT
增益:21 dB最大输入功率 (CW):18 dBm
最大工作频率:32000 MHz最小工作频率:27000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND MEDIUM POWER最大电压驻波比:7
Base Number Matches:1

HMC1132PM5ETR 数据手册

 浏览型号HMC1132PM5ETR的Datasheet PDF文件第2页浏览型号HMC1132PM5ETR的Datasheet PDF文件第3页浏览型号HMC1132PM5ETR的Datasheet PDF文件第4页浏览型号HMC1132PM5ETR的Datasheet PDF文件第5页浏览型号HMC1132PM5ETR的Datasheet PDF文件第6页浏览型号HMC1132PM5ETR的Datasheet PDF文件第7页 
27 GHz to 32 GHz,  
GaAs, pHEMT, MMIC Power Amplifier  
Data Sheet  
HMC1132PM5E  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
PSAT: 29.5 dBm  
High output IP3: 37 dBm  
High gain: 24 dB (typical) at 29 GHz to 32 GHz  
DC supply: 5 V at 650 mA  
50 Ω matched input/output  
32-lead, 5 mm × 5 mm LFCSP package: 25 mm2  
GND  
NIC  
NIC  
1
2
3
4
5
6
7
8
24 GND  
23 NIC  
HMC1132PM5E  
22  
NIC  
21 GND  
GND  
RFIN  
GND  
NIC  
20  
19  
RFOUT  
GND  
APPLICATIONS  
18 NIC  
17 GND  
GND  
Point to point radios  
Point to multipoint radios  
Very small aperture terminals (VSATs) and satellite  
communication (SATCOM)  
Military and space  
PACKAGE  
BASE  
NIC = NOT INTERNALLY CONNECTED.  
Figure 1.  
GENERAL DESCRIPTION  
The HMC1132PM5E is a four-stage, gallium arsenide (GaAs)  
pseudomorphic high electron mobility transistor (pHEMT),  
monolithic microwave integrated circuit (MMIC) power  
amplifier. The device operates from 27 GHz to 32 GHz,  
providing 24 dB of gain and 29.5 dBm of saturated output  
power from a 5 V power supply.  
multipoint radio systems. The amplifier configuration and high  
gain make the HMC1132PM5E an ideal candidate for last stage  
signal amplification before the antenna.  
The HMC1132PM5E amplifier input/outputs (I/Os) are  
internally matched to 50 Ω. The device is housed in a RoHS  
compliant, premolded cavity, 5 mm × 5 mm LFCSP package,  
making the device compatible with high volume surface-mount  
technology (SMT) assembly equipment.  
The HMC1132PM5E exhibits excellent linearity with high  
output third-order intercept (IP3) of 37 dBm, and it is  
optimized for high capacity, point to point and point to  
Rev. 0  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2018 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 

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