27 GHz to 32 GHz,
GaAs, pHEMT, MMIC Power Amplifier
Data Sheet
HMC1132PM5E
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PSAT: 29.5 dBm
High output IP3: 37 dBm
High gain: 24 dB (typical) at 29 GHz to 32 GHz
DC supply: 5 V at 650 mA
50 Ω matched input/output
32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
GND
NIC
NIC
1
2
3
4
5
6
7
8
24 GND
23 NIC
HMC1132PM5E
22
NIC
21 GND
GND
RFIN
GND
NIC
20
19
RFOUT
GND
APPLICATIONS
18 NIC
17 GND
GND
Point to point radios
Point to multipoint radios
Very small aperture terminals (VSATs) and satellite
communication (SATCOM)
Military and space
PACKAGE
BASE
NIC = NOT INTERNALLY CONNECTED.
Figure 1.
GENERAL DESCRIPTION
The HMC1132PM5E is a four-stage, gallium arsenide (GaAs)
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC) power
amplifier. The device operates from 27 GHz to 32 GHz,
providing 24 dB of gain and 29.5 dBm of saturated output
power from a 5 V power supply.
multipoint radio systems. The amplifier configuration and high
gain make the HMC1132PM5E an ideal candidate for last stage
signal amplification before the antenna.
The HMC1132PM5E amplifier input/outputs (I/Os) are
internally matched to 50 Ω. The device is housed in a RoHS
compliant, premolded cavity, 5 mm × 5 mm LFCSP package,
making the device compatible with high volume surface-mount
technology (SMT) assembly equipment.
The HMC1132PM5E exhibits excellent linearity with high
output third-order intercept (IP3) of 37 dBm, and it is
optimized for high capacity, point to point and point to
Rev. 0
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