Datasheet > HMC-ALH369-Die

HMC-ALH369-Die

更新时间： 2023-12-20 18:44:48

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
6页	483K
描述
低噪声放大器芯片，24 - 40 GHz

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HMC-ALH369-Die 数据手册

HMC-ALH369

v06.0118

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 24 - 40 GHz

Typical Applications

This HMC-ALH369 is ideal for:

Features

Excellent Noise Figure: 2 dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Phased Arrays

• VSAT

Gain: 22 dB

P1dB Output Power: +11 dBm

Supply Voltage: +5V @ 66 mA

Die Size: 2.10 x 1.37 x 0.1 mm

• SATCOM

General Description

Functional Diagram

The HMC-ALH369 is a GaAs MMIC HEMT three stage,

self-biased Low Noise Ampliﬁer die which operates

between 24 and 40 GHz.The ampliﬁer pro-vides 22 dB

of gain, from a single bias supply of +5V @ 66 mA with

a noise ﬁgure of 2 dB. The HMC-ALH369 ampliﬁer die

is ideal for integration into Multi-Chip-Modules (MCMs)

due to its small size (2.88 mm²).

Electrical Speciﬁcations ^[1], T_A= +25° C, Vdd= +5V, Idd = 66mA

Parameter

Min.

Typ.

24 -27

Max.

Min.

Typ.

27 - 37

Max.

Min.

Typ.

37 - 40

Max.

2.7

Units

GHz

Frequency Range

Gain

Noise Figure

2.2

2.7

2.0

2.5

2.2

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression

Supply Current (Idd)

dBm

[1] Unless otherwise indicated, all measurements are from probed die

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Speciﬁcations subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc.,

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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