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HMC-ALH508 PDF预览

HMC-ALH508

更新时间: 2024-01-10 22:36:18
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
6页 214K
描述
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

HMC-ALH508 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:3.20 X 1.60 MM, 0.10 MM HEIGHT, DIE-8
针数:0Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.31.00.01
风险等级:5.15特性阻抗:50 Ω
构造:COMPONENT增益:11 dB
最大输入功率 (CW):-5 dBm最大工作频率:86000 MHz
最小工作频率:71000 MHz最高工作温度:85 °C
最低工作温度:-55 °C射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

HMC-ALH508 数据手册

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HMC-ALH508  
v02.0209  
GaAs HEMT LOW NOISE  
AMPLIFIER, 71 - 86 GHz  
1
Typical Applications  
This HMC-ALH508 is ideal for:  
Features  
Noise Figure: <5 dB  
• Short Haul / High Capacity Links  
• Wireless LANs  
P1dB: +7 dBm  
Gain: 13 dB  
• Automotive Radar  
Supply Voltage: +2.4V  
50 Ohm Matched Input/Output  
Die Size: 3.2 x 1.6 x 0.1 mm  
• Military & Space  
• E-Band Communication Systems  
General Description  
Functional Diagram  
The HMC-ALH508 is a three stage GaAs HEMT MMIC  
Low Noise Amplifier (LNA) which operates between  
71 and 86 GHz. The HMC-ALH508 features 13 dB  
of small signal gain, 4.5 dB of noise figure and an  
output power of +7 dBm at 1dB compression from  
two supply voltages at 2.1V and 2.4V respectively.  
All bond pads and the die backside are Ti/Au  
metallized and the amplifier device is fully pass-  
ivated for reliable operation. This versatile LNA is  
compatible with conventional die attach methods,  
as well as thermocompression and thermosonic  
wire bonding, making it ideal for MCM and hybrid  
microcircuit applications. All data shown herein is  
measured with the chip in a 50 Ohm environment  
and contacted with RF probes.  
Electrical Specifications[1], TA = +25° C  
Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA[2]  
Parameter  
Min.  
Typ.  
71 - 86  
13  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
11  
Noise Figure  
4.5  
8
dB  
Input Return Loss  
Output Return Loss  
dB  
10  
dB  
Output Power for 1 dB Compression (P1dB)  
Total Supply Current (Idd1+Idd2+Idd3)  
7
dBm  
mA  
30  
[1] Unless otherwise indicated, all measurements are from probed die  
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Iddtotal = 30 mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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