Datasheet > HMC-ALH445_10

HMC-ALH445_10

更新时间： 2024-02-04 13:01:05

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	245K
描述
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

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HMC-ALH445_10 数据手册

HMC-ALH445

v03.0410

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 18 - 40 GHz

Typical Applications

This HMC-ALH445 is ideal for:

Features

Noise Figure: 3.9 dB @ 28 GHz

• Wideband Communication Systems

• Point-to-Point Radios

Gain: 9 dB

P1dB Output Power: +12 dBm @ 28 GHz

Supply Voltage: +5V @ 45 mA

Die Size: 1.6 x 1.6 x 0.1 mm

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

General Description

Functional Diagram

The HMC-ALH445 is a GaAs MMIC HEMT self-biased,

wideband Low Noise Ampliﬁer die which operates

between 18 and 40 GHz. The ampliﬁer provides

9 dB of gain, 3.9 dB noise ﬁgure at 28 GHz and

+12 dBm of output power at 1 dB gain compression

while requiring only 45 mA from a single +5V supply.

The HMC-ALH445 ampliﬁer is ideal for integration into

Multi-Chip-Modules (MCMs) due to its small size.

Electrical Speciﬁcations*, T_A= +25° C, Vdd= +5V

Parameter

Min.

Typ.

18 - 28

Max.

Min.

Typ.

28 - 40

Max.

4.5

Units

GHz

Frequency Range

Gain

Noise Figure

3.9

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression

dBm

Supply Current (Idd) (Vdd = 5V)

*Unless otherwise indicated, all measurements are from probed die

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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