Datasheet > HMC-ALH459_10

HMC-ALH459_10

更新时间： 2024-01-01 06:29:47

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	163K
描述
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

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HMC-ALH459_10 数据手册

HMC-ALH459

v01.1207

GaAs HEMT LOW NOISE

AMPLIFIER, 71 - 86 GHz

Typical Applications

This HMC-ALH459 is ideal for:

Features

Noise Figure: <5 dB

• Short Haul / High Capacity Links

• Wireless LANs

P1dB: +7 dBm

Gain: 14 dB

• Automotive Radar

Supply Voltage: +2.4V

50 Ohm Matched Input/Output

Die Size: 3.10 x 1.60 x 0.1 mm

• Military & Space

• E-Band Communication Systems

General Description

Functional Diagram

The HMC-ALH459 is a three stage GaAs HEMT MMIC

Low Noise Ampliﬁer (LNA) which operates between

71 and 86 GHz. The HMC-ALH459 features 14 dB

of small signal gain, 4.5 dB of noise ﬁgure and an

output power of +7 dBm at 1dB compression from

two supply voltages at 2.1V and 2.4V respectively.

All bond pads and the die backside are Ti/Au

metallized and the ampliﬁer device is fully pass-

ivated for reliable operation. This versatile LNA is

compatible with conventional die attach methods,

as well as thermocompression and thermosonic

wire bonding, making it ideal for MCM and hybrid

microcircuit applications. All data shown herein is

measured with the chip in a 50 Ohm environment

and contacted with RF probes.

Electrical Speciﬁcations^[1], T_A= +25° C

Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA^[2]

Parameter

Min.

Typ.

71 - 86

Max.

Units

GHz

Frequency Range

Gain

Noise Figure

4.5

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Supply Current (Idd1+Idd2+Idd3)

dBm

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Idd_total= 30 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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