Datasheet > 射频和微波 > 射频/微波放大器> HMC-ALH459

HMC-ALH459

更新时间： 2024-09-25 05:36:15

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
6页	216K
描述
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

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技术参数
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HMC-ALH459 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	13 dB	最大输入功率 (CW)：	-5 dBm
JESD-609代码：	e4	最大工作频率：	86000 MHz
最小工作频率：	71000 MHz	最高工作温度：	85 °C
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	GOLD	Base Number Matches：	1

HMC-ALH459 数据手册

HMC-ALH459

v01.1207

GaAs HEMT LOW NOISE

AMPLIFIER, 71 - 86 GHz

Typical Applications

This HMC-ALH459 is ideal for:

Features

Noise Figure: <5 dB

• Short Haul / High Capacity Links

• Wireless LANs

P1dB: +7 dBm

Gain: 14 dB

• Automotive Radar

Supply Voltage: +2.4V

50 Ohm Matched Input/Output

Die Size: 3.10 x 1.60 x 0.1 mm

• Military & Space

• E-Band Communication Systems

General Description

Functional Diagram

The HMC-ALH459 is a three stage GaAs HEMT MMIC

Low Noise Ampliﬁer (LNA) which operates between

71 and 86 GHz. The HMC-ALH459 features 14 dB of

small signal gain, 4.5 dB of noise ﬁ gure and an output

power of +7 dBm at 1dB compression from two supply

voltages at 2.1V and 2.4V respectively. All bond pads

and the die backside are Ti/Au metallized and the

ampliﬁer device is fully passivated for reliable operation.

This versatile LNA is compatible with conventional die

attach methods, as well as thermocompression and

thermosonic wire bonding, making it ideal for MCM and

hybrid microcircuit applications. All data shown herein

is measured with the chip in a 50 Ohm environment

and contacted with RF probes.

Electrical Speciﬁcations^[1], T_A= +25° C

Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA^[2]

Parameter

Min.

Typ.

71 - 86

Max.

Units

GHz

Frequency Range

Gain

Noise Figure

4.5

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Supply Current (Idd1+Idd2+Idd3)

dBm

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Idd_total= 30 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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与HMC-ALH459相关器件

型号	品牌	获取价格	描述	数据表
HMC-ALH459_10	HITTITE	获取价格	GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
HMC-ALH476	HITTITE	获取价格	GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
HMC-ALH476-Die	ADI	获取价格	低噪声放大器芯片，14 - 27 GHz
HMC-ALH482	HITTITE	获取价格	ACTIVE BIAS CONTROLLER
HMC-ALH482-Die	ADI	获取价格	低噪声放大器芯片，2 - 22 GHz
HMC-ALH508	HITTITE	获取价格	GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
HMC-ALH508_10	HITTITE	获取价格	GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
HMC-ALH508-Die	ADI	获取价格	低噪声放大器芯片，71 - 86 GHz
HMC-ALH509	HITTITE	获取价格	GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
HMC-ALH509_09	HITTITE	获取价格	GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

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