Datasheet > 存储 > SRAM> HM628512BLTT-7SL

HM628512BLTT-7SL

更新时间： 2024-02-27 17:58:04

品牌	Logo	应用领域
日立 - HITACHI		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
18页	87K
描述
4 M SRAM (512-kword x 8-bit)

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中文翻译

获取价格

技术参数
数据手册

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HM628512BLTT-7SL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
内存集成电路类型：	STANDARD SRAM	Base Number Matches：	1

HM628512BLTT-7SL 数据手册

HM628512B Series

DC Characteristics (Ta = –20 to +70°C, V_CC= 5 V ±10% , V_SS= 0 V)

Parameter

Symbol Min Typ*¹Max Unit Test conditions

Input leakage current

Output leakage current

|I_LI|

—

µA

Vin = V_SSto V_CC

|I_LO|

CS = V_IHor OE = V_IHor

WE = V_IL, V_I/O= V_SSto V_CC

Operating power supply current: DC

Operating power supply current

I_CC

—

CS = V_IL,

others = V_IH/V_IL, I_I/O= 0 mA

I_CC1

Min cycle, duty = 100%

CS = V_IL, others = V_IH/V_IL

I_I/O= 0 mA

Operating power supply current

I_CC2

—

Cycle time = 1 µs,

duty = 100%

I_I/O= 0 mA, CS ≤ 0.2 V

V_IH≥ V_CC– 0.2 V, V_IL≤ 0.2 V

Standby power supply current: DC

I_SB

—

2.4

CS = V_IH

Standby power supply current (1): DC I_SB1

2*²

2*³

2*⁴

—

100*²µA

Vin ≥ 0 V, CS ≥ V_CC– 0.2 V

50*³

20*⁴

0.4

µA

Output low voltage

Output high voltage

V_OL

V_OH

I_OL= 2.1 mA

—

I_OH= –1.0 mA

Notes: 1. Typical values are at V_CC= 5.0 V, Ta = +25°C and specified loading, and not guaranteed.

2. This characteristics is guaranteed only for L version.

3. This characteristics is guaranteed only for L-SL version.

4. This characteristics is guaranteed only for L-UL version.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Cin

Typ

—

Max

Unit

Test conditions

Vin = 0 V

Input capacitance*¹

Input/output capacitance*¹

C_I/O

—

V_I/O= 0 V

Note: 1. This parameter is sampled and not 100% tested.

1...3 4 567 8 9...18

中文翻译

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