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HM628512BLTTI-7 PDF预览

HM628512BLTTI-7

更新时间: 2024-11-19 22:19:03
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
18页 86K
描述
4 M SRAM (512-kword x 8-bit)

HM628512BLTTI-7 数据手册

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HM628512BI Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-935C (Z)  
Rev. 2.0  
Aug. 24, 1999  
Description  
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has  
realized higher density, higher performance and low power consumption by employing Hi-CMOS process  
technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for  
battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.  
Features  
Single 5 V supply  
Access time: 70/85 ns (max)  
Power dissipation  
Active: 50 mW/MHz (typ)  
Standby: 10 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Battery backup operation  
Operating temperature: –40 to +85˚C  

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