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HM628512CLP-7 PDF预览

HM628512CLP-7

更新时间: 2024-11-23 22:55:19
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
17页 85K
描述
4 M SRAM (512-kword x 8-bit)

HM628512CLP-7 数据手册

 浏览型号HM628512CLP-7的Datasheet PDF文件第2页浏览型号HM628512CLP-7的Datasheet PDF文件第3页浏览型号HM628512CLP-7的Datasheet PDF文件第4页浏览型号HM628512CLP-7的Datasheet PDF文件第5页浏览型号HM628512CLP-7的Datasheet PDF文件第6页浏览型号HM628512CLP-7的Datasheet PDF文件第7页 
HM628512C Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-1212 (Z)  
Preliminary  
Rev. 0.0  
Sep. 12, 2000  
Description  
The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,  
higher performance and low power consumption by employing Hi-CMOS process technology. The device,  
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is  
available for high density mounting. The HM628512C is suitable for battery backup system.  
Features  
Single 5 V supply  
Access time: 55/70 ns (max)  
Power dissipation  
Active: 50 mW/MHz (typ)  
Standby: 10 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Battery backup operation  
Preliminary: The specification of this device are subject to change without notice. Please contact your  
nearest Hitachi’s Sales Dept. regarding specification.  

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