Datasheet > HFP10N65S

HFP10N65S

更新时间： 2024-09-14 05:36:03

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	432K
描述
650V N-Channel MOSFET

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数据手册

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HFP10N65S 数据手册

Sep 2009

BV_DSS= 650 V

_{DS(on) typ}= 0.83 Ω

HFP10N65S

650V N-Channel MOSFET

I_D= 9.2 A

TO-220

FEATURES

q Originative New Design

q Superior Avalanche Rugged Technology

q Robust Gate Oxide Technology

q Very Low Intrinsic Capacitances

q Excellent Switching Characteristics

q Unrivalled Gate Charge : 29 nC (Typ.)

q Extended Safe Operating Area

q Lower R_DS(ON): 0.83 Ω (Typ.) @V_GS=10V

q 100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

650

9.2

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

5.5

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

36.8

±30

650

9.2

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.6

4.5

V/ns

156

1.25

W/℃

℃

Power Dissipation (T_C= 25℃)

- Derate above 25℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

Junction-to-Case

Case-to-Sink

0.5

0.8

℃/W

Junction-to-Ambient

62.5

R_θJA

◎ SEMIHOW REV.A0,MAY 2009

12 3 4 5 6 7 8

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