Sep 2009
BVDSS = 500 V
DS(on) typ = 0.39 Ω
R
HFP13N50S
500V N-Channel MOSFET
ID = 13 A
TO-220
FEATURES
Originative New Design
1
2
3
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 38 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
500
13
ID
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
8
A
IDM
Drain Current
– Pulsed
(Note 1)
52
A
VGS
EAS
IAR
Gate-Source Voltage
±30
560
13
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
19.5
4.5
mJ
V/ns
Power Dissipation (TC = 25℃)
- Derate above 25℃
195
1.56
W
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink
--
0.5
--
0.64
--
℃/W
Junction-to-Ambient
62.5
RθJA
◎ SEMIHOW REV.A0,Sep 2009