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HFP13N50S PDF预览

HFP13N50S

更新时间: 2024-11-01 10:48:11
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描述
500V N-Channel MOSFET

HFP13N50S 数据手册

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Sep 2009  
BVDSS = 500 V  
DS(on) typ = 0.39 Ω  
R
HFP13N50S  
500V N-Channel MOSFET  
ID = 13 A  
TO-220  
FEATURES  
Originative New Design  
1
2
3
Superior Avalanche Rugged Technology  
Robust Gate Oxide Technology  
Very Low Intrinsic Capacitances  
Excellent Switching Characteristics  
Unrivalled Gate Charge : 38 nC (Typ.)  
Extended Safe Operating Area  
Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V  
100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
500  
13  
ID  
Drain Current  
– Continuous (TC = 25)  
– Continuous (TC = 100)  
A
Drain Current  
8
A
IDM  
Drain Current  
– Pulsed  
(Note 1)  
52  
A
VGS  
EAS  
IAR  
Gate-Source Voltage  
±30  
560  
13  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
19.5  
4.5  
mJ  
V/ns  
Power Dissipation (TC = 25)  
- Derate above 25℃  
195  
1.56  
W
W/℃  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
Junction-to-Case  
Case-to-Sink  
--  
0.5  
--  
0.64  
--  
/W  
Junction-to-Ambient  
62.5  
RθJA  
SEMIHOW REV.A0,Sep 2009