June 2005
BVDSS = 600 V
DS(on) typ = 4.0 Ω
R
HFP2N60
600V N-Channel MOSFET
ID = 2.0 A
TO-220
FEATURES
Originative New Design
1
2
3
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
2.0
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
1.3
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
8.0
A
Gate-Source Voltage
V
±30
150
2.0
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
5.4
mJ
V/ns
5.5
54
0.43
W
W/℃
℃
- Derate above 25℃
Operating and Storage Temperature Range
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink
--
0.5
--
2.32
--
℃/W
Junction-to-Ambient
62.5
RθJA
◎ SEMIHOW REV.A0,June 2005