Datasheet > HFP4N65

HFP4N65

更新时间： 2024-09-24 05:36:11

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描述
650V N-Channel MOSFET

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中文翻译

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数据手册

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HFP4N65 数据手册

April 2006

BV_DSS= 650 V

_{DS(on) typ}= 2.3 Ω

HFP4N65

650V N-Channel MOSFET

I_D= 3.6 A

TO-220

FEATURES

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 15 nC (Typ.)

 Extended Safe Operating Area

 Lower R_DS(ON): 2.3 Ω (Typ.) @V_GS=10V

 100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

650

3.6

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

2.3

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

14.4

±30

240

3.6

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

5.5

100

0.8

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

Junction-to-Case

Case-to-Sink

0.5

1.25

℃/W

Junction-to-Ambient

62.5

R_θJA

◎ SEMIHOW REV.A0,April 2006

12 3 4 5 6 7 8

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