Datasheet > HFP45N06

HFP45N06

更新时间： 2024-02-11 00:12:37

品牌	Logo	应用领域
华汕 - HUASHAN		/
页数	文件大小	规格书
5页	266K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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HFP45N06 数据手册

N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.

HFP45N06

█ APPLICATIONSL

TO-220

Low Voltage high-Speed Switching.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~175℃

T_j— — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_D— — Allowable Power Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 131W

V_DSS— — Drain-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

V_GSS— — Gate-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ±20V

I_D— — Drain Curren（t T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 45A

1―G

2―D

3―S

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BV_DSSDrain-Source Breakdown Voltage

I_D=250μA ,V_GS=0V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate –Source Leakage Current

Gate Threshold Voltage

μA V_DS= 60V，V_GS=0

±100 nA V_GS=±20V , V_DS=0V

2.0

4.0

V_DS= V_GS, I_D=250μA

V_GS(th)

V_GS=10V, I_D=45A

R_DS(on)*Static Drain-Source On-Resistance

0.028

Ciss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

2050

600

V_DS=25V, V_GS=0,f=1MHz

Coss

Crss

200

tON

120

t_d(on)

Turn - On Delay Time

Rise Time

V_DD=30V, I_D=45A

RL=0.667Ω, V_GS=10V

R_G= 3.6 Ω

t_d(off)

t_f

Turn - Off Delay Time

Fall Time

tOFF

Turn Off Time

125 150

67 80

VGS=20V V_DS=48V，ID=45A

Total Gate Charge

Qg(10) Gate Charge at 10V

VGS=10V RL=1.07Ω

VGS=2V Ig（REF）=1.5mA

I_SD=45A

Qgd

Threshold Gate Charge

3.7 4.5

1.5

V_SD

Rth

（j-c）

Diode Forward Voltage

Thermal Resistance，

Junction-to-Case

℃/W

1.14

*Pulse Test：Pulse Width≤ 300μs，Duty Cycle≤ 2%

12 3 4 5

中文翻译

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