Datasheet > HFP4N60

HFP4N60

更新时间： 2024-02-28 04:30:49

品牌	Logo	应用领域
华汕 - HUASHAN		/
页数	文件大小	规格书
5页	211K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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HFP4N60 数据手册

N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.

HFP4N60

█ APPLICATIONSL

TO-220

High-Speed Switching.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_D— — Allowable Power Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100W

V_DSS— — Drain-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600V

V_GSS— — Gate-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ±30V

I_D— — Drain Curren（t T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4.0A

1―G

2―D

3―S

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate –Source Leakage Current

Gate Threshold Voltage

600

I_D=250μA ,V_GS=0V

10 μA V_DS=600V，V_GS=0

I_GSS

±100 nA V_GS=±30V , V_DS=0V

2.0

4.0

V_DS= V_GS, I_D=250μA

V_GS(th)

V_GS=10V, I_D=2.0A

R_DS(on)Static Drain-Source On-Resistance

2.0 2.5

710 920

Ciss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn - On Delay Time

Rise Time

V_DS=25V, V_GS=0,f=1MHz

Coss

4.8

8.5

Crss

t_d(on)

t_d(off)

t_f

120

150

120

V_DD=300V, I_D=4.0A

R_G= 25 Ω*

Turn - Off Delay Time

Fall Time

V_DS=480V

Qgs

Qgd

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

VGS=10V

ID=4.0A*

Continuous Source Current

Diode Forward Voltage

4.0

1.5

V_SD

I_S=4.0A , V_GS=0

Thermal Resistance，

Junction-to-Case

℃/W

Rth（j-c）

1.25

*Pulse Test：Pulse Width≤ 300μs，Duty Cycle≤ 2%

12 3 4 5

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