Datasheet > HFP30N06

HFP30N06

更新时间： 2024-01-29 19:50:00

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
6页	225K
描述
N-Channel Enhancement Mode Field Effect Transistor

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HFP30N06 数据手册

HFP30N06

Shantou Huashan Electronic Devices Co.,Ltd.

N-Channel Enhancement Mode Field Effect Transistor

█ General Description

TO-220

This Power MOSFET is produced using advancedplanar stripe, DMOS

technology. This latest technology has beenespecially designed to minimize

on-state resistance, have a low gate charge with superior switching performance,

and rugged avalanche characteristics. This devices is well suited for synchronous

DC-DC Converters and Power Management in portable and battery operated

1- G 2-D 3-S

products.

█ Features

• 30A, 60V, R_DS(on) <0.04? @V_GS= 10 V

• Low gate charge

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:FQP30N06

█ Maximum Ratings（Ta=25℃ unless otherwise specified）

T_stg— — Storage Temperature ------------------------------------------------------ -55~175℃

T_j— — Operating Junction Temperature -------------------------------------------------- 175℃

V_{D S S}— — Drain-Source Voltage ----------------------------------------------------------60V

I_D— — Drain Current (Continuous)(T_c=25℃)----------------------------------------------------------- 30A

Drain Current (Continuous)(T_c=100℃)--------------------------------------------------------- 21.2A

I_DM— — Drain Current Pulse ------------------------------------------------------------------------------ 120A

V_GSS— — Gate-Source Voltage -------------------------------------------------------------------------- ±20V

P_D— — Maximum Power Dissipation (T_c=25℃)----------------------------------------------------- 79W

E_AS— — Single Pulse Avalanche Energy

(starting Tj = 25℃, I_D= I_AR, V_DD= 50 V) --------------------------------------------------- 430 mJ

dv/dt— — Reak Diode Recovery dv/dt

(ISD≤ 30A,di/dt≤ 300A/us,Vdd≤ BVdss,Duty Cycle ≤ 2%) ------------------------- 7.0V/ns

█ Thermal Characteristics

Symbol

Rthj-case

Items

TO-220

Max 1.9

Unit

℃/W

Thermal Resistance Junction-case

Rthj-amb

Rth c-s

Thermal Resistance Junction-ambient

Thermal Resistance Case-sink

Max 62.5

Typ 0.5

℃/W

12 3 4 5 6

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