Datasheet > HFH11N90

HFH11N90

更新时间： 2022-12-18 01:18:06

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
7页	1170K
描述
900V N-Channel MOSFET

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中文翻译

获取价格

数据手册

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HFH11N90 数据手册

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10¹

10⁰

10¹

150^oC

Bottom : 5.5 V

-55^oC

25^oC

10⁰

※ Notes :

1. 250μ s Pulse Test

2. T_C= 25 ℃

※ Notes :

1. V_DS= 50V

-1

2. 250μ s Pulse Test

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

2.5

2.0

1.5

1.0

0.5

10¹

V_GS= 10V

V_GS= 20V

10⁰

25℃

150 ℃

※ Notes :

1. V_GS= 0V

2. 250μ s Pulse Test

※ Note : T = 25 ℃

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_SD, Source-Drain voltage [V]

I_D, Drain Current [A]

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

V_DS= 180V

V_DS= 450V

iss

V_DS= 720V

C_oss

※ Notes :

1. V_GS= 0 V

2. f = 1 MHz

rss

※ Note : I_D= 11A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

◎ SEMIHOW REV.A0,Dec 2005

1 234 5 6 7

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