PD -2.475A
HFA75MB40C
Ultrafast, Soft Recovery Diode
VR = 400V
HEXFREDTM
(ISOLATED BASE)
Features
Reduced RFI and EMI
Reduced Snubbing
VF(typ.) = 1V
IF(AV) = 75A
Extensive Characterization of Recovery Parameters
Qrr (typ.) = 200nC
IRRM(typ.)= 6A
(4-6)
(1-3)
(7-9)
trr(typ.)= 30ns
ANODE COMMON ANODE
CATHODE
1
2
di(rec)M/dt (typ.) = 190A/µs
Description
HEXFREDT M diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
A
D-60
(MODIFIED T0-249AA)
Absolute Maximum Ratings (per Leg)
Parameter
Max.
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
400
75
V
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Continuous Forward Current
36
A
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
300
5.0
1.4
125
50
IAS
EAS
mJ
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal - Mechanical Characteristics
Parameter
Min.
Typ.
Max.
1.0
Units
RθJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat, Greased Surface
Weight
°C/W
K/W
0.50
RθCS
Wt
0.10
58 (2.0)
g (oz)
lbfin
(Nm)
Mounting Torque
35 (4.0)
50 (5.7)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
125°C
5/5/97