PD -2.473 rev. B 01/99
HFA80NC40C
HEXFREDTM
Ultrafast, Soft Recovery Diode
VR = 400V
VF(typ.) = 1V
Features
• Reduced RFI and EMI
• Reduced Snubbing
IF(AV) = 80A
• Extensive Characterization of
Recovery Parameters
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.) = 190A/µs
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
D-61-8
Absolute Maximum Ratings (per Leg)
Parameter
Max.
400
85
Units
V
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
42
A
300
1.4
150
59
EAS
mJ
W
PD @ TC = 25°C
PD @ TC = 100°C
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Min.
––––
––––
––––
––––
Typ.
––––
Max.
0.85
Units
RthJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat , Greased Surface
Weight
°C/W
K/W
––––
0.42
RthCS
Wt
0.30
––––
––––
7.8 (0.28)
g (oz)
lbf•in
Mounting Torque
35 (4.0)
––––
50 (5.7)
(N•m)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
125°C
1