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HFA80FA120P PDF预览

HFA80FA120P

更新时间: 2024-11-11 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快软恢复二极管
页数 文件大小 规格书
7页 116K
描述
HEXFRED® Ultrafast Soft Recovery Diode, 80 A

HFA80FA120P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-XUFM-X4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.42Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):3 VJESD-30 代码:R-XUFM-X4
最大非重复峰值正向电流:400 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:40 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大功率耗散:178 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向电流:2000 µA最大反向恢复时间:0.052 µs
反向测试电压:960 V子类别:Other Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

HFA80FA120P 数据手册

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HFA80FA120P  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 80 A  
FEATURES  
• Fast recovery time characteristic  
1
4
• Electrically isolated base plate  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
• UL pending  
RoHS  
COMPLIANT  
2
3
SOT-227  
• Totally lead (Pb)-free  
• Designed and qualified for industrial level  
DESCRIPTION/APPLICATIONS  
The dual diode series configuration (HFA80FA120P) is used  
for output rectification or freewheeling/clamping operation  
and high voltage application.  
The semiconductor in the SOT-227 package is isolated from  
the copper base plate, allowing for common heatsinks and  
compact assemblies to be built.  
These modules are intended for general applications such as  
HV power supplies, electronic welders, motor control and  
inverters.  
PRODUCT SUMMARY  
VR  
1200 V  
2.6 V  
VF (typical)  
trr (typical)  
IF(DC) at TC  
25 ns  
40 A at 78 °C  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
1200  
40  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF  
TC = 78 °C  
TJ = 25 °C  
Single pulse forward current  
Maximum repetitive forward current  
IFSM  
IFRM  
400  
72  
A
Rated VR, square wave, 20 kHz, TC = 60 °C  
TC = 25 °C  
178  
71  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
RMS isolation voltage  
VISOL  
Any terminal to case, t = 1 min  
2500  
V
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to + 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 µA  
1200  
-
-
IF = 25 A  
IF = 40 A  
-
-
-
-
-
-
2.6  
2.9  
3.4  
2.0  
0.5  
43  
3.0  
V
Forward voltage  
VFM  
See fig. 1  
3.3  
IF = 80 A, TJ = 125 °C  
VR = VR rated  
-
-
µA  
mA  
pF  
Reverse leakage current  
Junction capacitance  
IRM  
CT  
See fig. 2  
See fig. 3  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
2
-
Document Number: 94075  
Revision: 28-Aug-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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