Datasheet > HFA80FA120P_10

HFA80FA120P_10

更新时间： 2024-11-11 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	136K
描述
HEXFRED Ultrafast Soft Recovery Diode, 80 A

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HFA80FA120P_10 数据手册

HFA80FA120P

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 80 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

SOT-227

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (HFA80FA120P) is used

for output rectification or freewheeling/clamping operation

and high voltage application.

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

These modules are intended for general applications such

as HV power supplies, electronic welders, motor control and

inverters.

PRODUCT SUMMARY

V_R

1200 V

2.6 V

V_F(typical)

t_rr(typical)

25 ns

_F(DC)at T_C

40 A at 78 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

MAX.

1200

UNITS

Cathode to anode voltage

Continuous forward current

Single pulse forward current

Maximum repetitive forward current

I_F

T_C= 78 °C

T_J= 25 °C

I_FSM

I_FRM

400

Rated V_R,square wave, 20 kHz, T_C= 60 °C

T_C= 25 °C

178

Maximum power dissipation

RMS isolation voltage

P_D

_C= 100 °C

V_ISOL

Any terminal to case, t = 1 min

2500

Operating junction and storage

temperature range

T_J, T_Stg

- 55 to + 150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode

breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 25 A

I_F= 40 A

2.6

2.9

3.4

2.0

0.5

3.0

3.3

Forward voltage

V_FM

See fig. 1

I_F= 80 A, T_J= 125 °C

V_R= V_Rrated

μA

Reverse leakage current

Junction capacitance

I_RM

C_T

See fig. 2

See fig. 3

T_J= 125 °C, V_R= 0.8 x V_Rrated

V_R= 200 V

Document Number: 94075

Revision: 22-Jul-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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