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HFA75MC40CPBF PDF预览

HFA75MC40CPBF

更新时间: 2024-11-11 13:02:39
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网软恢复二极管
页数 文件大小 规格书
5页 210K
描述
Rectifier Diode, 1 Phase, 2 Element, 75A, Silicon, TO-249AA,

HFA75MC40CPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-D3Reach Compliance Code:compliant
风险等级:5.72应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.49 VJEDEC-95代码:TO-249AA
JESD-30 代码:R-PSFM-D3元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:75 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大反向电流:10 µA
最大反向恢复时间:0.1 µs表面贴装:NO
端子形式:SOLDER LUG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA75MC40CPBF 数据手册

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PD -2.474A  
HFA75MC40C  
Ultrafast, Soft Recovery Diode  
VR = 400V  
HEXFREDTM  
(ISOLATED BASE)  
Features  
• Reduced RFI and EMI  
• Reduced Snubbing  
VF(typ.)ƒ = 1V  
IF(AV) = 75A  
• Extensive Characterization of Recovery Parameters  
Qrr (typ.) = 200nC  
IRRM(typ.) = 6A  
1
2
3
trr(typ.)= 30ns  
ANODE  
1
ANODE  
2
COMMON  
CATHODE  
di(rec)M/dt (typ.)ƒ = 190A/µs  
Description  
HEXFREDT M diodes are optimized to reduce losses and EMI/RFI in high frequency  
power conditioning systems. An extensive characterization of the recovery  
behavior for different values of current, temperature and di/dt simplifies the  
calculations of losses in the operating conditions. The softness of the recovery  
eliminates the need for a snubber in most applications. These devices are  
ideally suited for power converters, motors drives and other applications where  
switching losses are significant portion of the total losses.  
TO-249AA  
Absolute Maximum Ratings (per Leg)  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
400  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
Continuous Forward Current  
Continuous Forward Current  
75  
36  
A
Single Pulse Forward Current   
Maximum Single Pulse Avalanche Current ‚  
Non-Repetitive Avalanche Energy ‚  
Maximum Power Dissipation  
300  
5.0  
1.4  
125  
50  
IAS  
EAS  
mJ  
W
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal - Mechanical Characteristics  
Parameter  
Min.  
––––  
––––  
––––  
––––  
Typ.  
––––  
Max.  
1.0  
Units  
RθJC  
Junction-to-Case, Single Leg Conducting  
Junction-to-Case, Both Legs Conducting  
Case-to-Sink, Flat , Greased Surface  
Weight  
°C/W  
K/W  
––––  
0.50  
––––  
––––  
RθCS  
Wt  
0.10  
58 (2.0)  
g (oz)  
lbf•in  
Mounting Torque  
35 (4.0)  
––––  
50 (5.7)  
(N•m)  
Note:  Limited by junction temperature  
‚ L = 100µH, duty cycle limited by max TJ  
ƒ 125°C  
5/5/97  

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