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HFA30PB120

更新时间： 2024-11-28 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 140K
描述
Ultrafast Soft Recovery Diode, 30 A

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HFA30PB120 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-247AC包装说明：R-PSFM-T2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.57Is Samacsys：N
其他特性：LOW NOISE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.9 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T2最大非重复峰值正向电流：120 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：30 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：1200 V
最大反向恢复时间：0.17 µs子类别：Rectifier Diodes
表面贴装：NO技术：AVALANCHE
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

HFA30PB120 数据手册

 浏览型号HFA30PB120的Datasheet PDF文件第2页浏览型号HFA30PB120的Datasheet PDF文件第3页浏览型号HFA30PB120的Datasheet PDF文件第4页浏览型号HFA30PB120的Datasheet PDF文件第5页浏览型号HFA30PB120的Datasheet PDF文件第6页浏览型号HFA30PB120的Datasheet PDF文件第7页 
HFA30PB120  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 30 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Guaranteed avalanche  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
common  
cathode  
BENEFITS  
• Reduced RFI and EMI  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
Anode  
1
3
Anode  
2
DESCRIPTION  
HFA30PB120 is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 30 A continuous current, the  
HFA30PB120 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA30PB120 is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
TO-247AC modified  
PRODUCT SUMMARY  
VR  
VF at 30 A at 25 °C  
IF(AV)  
1200 V  
4.1 V  
30 A  
trr (typical)  
47 ns  
TJ (maximum)  
150 °C  
120 nC  
240 A/µs  
4.7 A  
Qrr (typical)  
dI(rec)M/dt (typical) at 125 °C  
IRRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
30  
120  
IFSM  
IFRM  
A
Maximum repetitive forward current  
90  
TC = 25 °C  
350  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
140  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93090  
Revision: 25-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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HFA30PB120 替代型号

型号 品牌 替代类型 描述 数据表
VS-HFA30PB120PBF VISHAY

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