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HFA30PB120PBF

更新时间： 2024-10-30 04:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 200K
描述
Ultrafast, Soft Recovery Diode

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HFA30PB120PBF 数据手册

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PD -95686A  
HFA30PB120PbF  
Ultrafast, Soft Recovery Diode  
HEXFREDTM  
Features  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• VeryLowIRRM  
VR = 1200V  
VF(typ.)* = 2.3V  
IF(AV) = 30A  
Qrr (typ.)= 120nC  
IRRM(typ.) = 4.7A  
trr(typ.) = 47ns  
• Very Low Qrr  
• GuaranteedAvalanche  
• Specified at Operating Conditions  
• Lead-Free  
di(rec)M/dt (typ.)* = 240A/µs  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and  
Switching Transistor  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
TO-247AC(Modified)  
Description  
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing  
the latest in epitaxial construction and advanced processing techniques it features a superb combination  
of characteristics which result in performance which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well  
suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time,  
the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not  
exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and  
the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing,  
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in  
power supplies and power conversion systems (such as inverters), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
30  
Units  
VR  
Cathode-to-Anode Voltage  
V
IF @ TC = 100°C Continuous Forward Current  
IFSM  
IFRM  
Single Pulse Forward Current  
120  
A
Maximum Repetitive Forward Current  
90  
350  
140  
PD @TC = 25°C Maximum Power Dissipation  
PD @TC = 100°C Maximum Power Dissipation  
W
TJ  
Operating Junction and  
-55 to + 150  
°C  
TSTG  
Storage Temperature Range  
* 125°C  
www.irf.com  
1
11/2/04  
123456

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