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HFA30PB120PBF_11

更新时间： 2024-11-28 10:47:47
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
8页 159K
描述
HEXFRED Ultrafast Soft Recovery Diode, 30 A

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VS-HFA30PB120PbF  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 30 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Base  
common  
cathode  
• Reduced parts count  
2
DESCRIPTION  
VS-HFA30PB120PbF is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 1200 V and 30 A  
continuous current, the VS-HFA30PB120PbF is especially  
well suited for use as the companion diode for IGBTs and  
MOSFETs. In addition to ultrafast recovery time, the  
HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA30PB120PbF is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
1
3
Cathode  
Anode  
TO-247AC modified  
PRODUCT SUMMARY  
Package  
TO-247AC modified (2 pins)  
IF(AV)  
30 A  
1200 V  
4.1 V  
VR  
VF at IF  
trr (typ.)  
TJ max.  
Diode variation  
47 ns  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
30  
120  
IFSM  
IFRM  
A
Maximum repetitive forward current  
90  
TC = 25 °C  
350  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
140  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94069  
Revision: 23-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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