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HFA04TB60PBF

更新时间： 2024-09-16 05:35:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 118K
描述
Ultrafast Soft Recovery Diode, 4 A

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中文翻译

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HFA04TB60PBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-220AC
包装说明：R-PSFM-T2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.51
Is Samacsys：N其他特性：LOW NOISE
应用：EFFICIENCY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.7 V
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
JESD-609代码：e3最大非重复峰值正向电流：25 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
最大功率耗散：25 W认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.042 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
Base Number Matches：1

HFA04TB60PBF 数据手册

 浏览型号HFA04TB60PBF的Datasheet PDF文件第2页浏览型号HFA04TB60PBF的Datasheet PDF文件第3页浏览型号HFA04TB60PBF的Datasheet PDF文件第4页浏览型号HFA04TB60PBF的Datasheet PDF文件第5页浏览型号HFA04TB60PBF的Datasheet PDF文件第6页 
HFA04TB60PbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
Available  
• Very low IRRM  
• Very low Qrr  
RoHS*  
COMPLIANT  
• Specified at operating temperature  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
Base  
cathode  
BENEFITS  
• Reduced RFI and EMI  
4
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
2
• Reduced parts count  
1
3
DESCRIPTION  
Cathode  
Anode  
HFA04TB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 4 A continuous current, the HFA04TB60  
is especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
TO-220AC  
PRODUCT SUMMARY  
VR  
VF at 4 A at 25 °C  
IF(AV)  
600 V  
1.8 V  
tendency to “snap-off” during the  
tb portion of recovery.  
4 A  
The HEXFRED features combine to offer designers a  
rectifier with lower noise and significantly lower switching  
losses in both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED HFA04TB60 is ideally suited for applications in  
power supplies and power conversion systems (such as  
inverters), motor drives, and many other similar applications  
where high speed, high efficiency is needed.  
t
rr (typical)  
17 ns  
TJ (maximum)  
Qrr  
150 °C  
40 nC  
280 A/µs  
dI(rec)M/dt  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
4
IFSM  
IFRM  
25  
A
Maximum repetitive forward current  
16  
TC = 25 °C  
25  
10  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94035  
Revision: 28-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
123456

中文翻译

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HFA04TB60PBF 替代型号

型号 品牌 替代类型 描述 数据表
IDP06E60 INFINEON

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