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HFA06TB120PBF

更新时间： 2024-11-24 05:35:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 120K
描述
Ultrafast Soft Recovery Diode, 6 A

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中文翻译

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HFA06TB120PBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-220AC
包装说明：R-PSFM-T2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.49
Is Samacsys：N其他特性：LOW NOISE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.8 V
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
JESD-609代码：e3最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：6 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：1200 V
最大反向恢复时间：0.08 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

HFA06TB120PBF 数据手册

 浏览型号HFA06TB120PBF的Datasheet PDF文件第2页浏览型号HFA06TB120PBF的Datasheet PDF文件第3页浏览型号HFA06TB120PBF的Datasheet PDF文件第4页浏览型号HFA06TB120PBF的Datasheet PDF文件第5页浏览型号HFA06TB120PBF的Datasheet PDF文件第6页浏览型号HFA06TB120PBF的Datasheet PDF文件第7页 
HFA06TB120  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 6 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
BENEFITS  
• Reduced RFI and EMI  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
3
DESCRIPTION  
Cathode  
Anode  
HFA06TB120 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 1200 V and 6 A continuous current, the  
HFA06TB120 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA06TB120 is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
TO-220AC  
PRODUCT SUMMARY  
VR  
VF at 6 A at 25 °C  
IF(AV)  
1200 V  
3.0 V  
6 A  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
RRM (typical)  
26 ns  
150 °C  
116 nC  
100 A/µs  
4.4 A  
Q
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
6
IFSM  
IFRM  
80  
A
Maximum repetitive forward current  
24  
62.5  
TC = 25 °C  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
25  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93035  
Revision: 29-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
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中文翻译

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HFA06TB120PBF 替代型号

型号 品牌 替代类型 描述 数据表
STTH512D STMICROELECTRONICS

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DSEI20-12A IXYS

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 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3
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