HFA06TB120STRR

更新时间： 2024-11-27 13:02:39

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
7页	152K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3

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HFA06TB120STRR 数据手册

Bulletin PD -2.382 rev. D 12/00

HFA06TB120

HEXFRED

Ultrafast, Soft Recovery Diode

BASE

Features

CATHODE

V_R= 1200V

V_F(typ.)* = 2.4V

I_F(AV)= 6.0A

• UltrafastRecovery

• UltrasoftRecovery

• Very Low I_RRM

• Very Low Q_rr

Q_rr(typ.)=116nC

I_RRM(typ.) = 4.4A

t_rr(typ.) = 26ns

• SpecifiedatOperatingConditions

Benefits

ANODE

CATHODE

di_(rec)M/dt (typ.)* = 100A/µs

• ReducedRFIandEMI

• Reduced Power Loss in Diode and Switching

Transistor

• HigherFrequencyOperation

• ReducedSnubbing

• ReducedPartsCount

TO-220AC

Description

International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and

6 amps continuous current, the HFA06TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM

)

and does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing, component

countandheatsinksizes. TheHEXFREDHFA06TB120isideallysuitedforapplications

inpowersuppliesandpowerconversionsystems(suchasinverters), motordrives, and

many other similar applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

1200

8.0

62.5

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

T_STG

-55 to +150

°C

Storage Temperature Range

* 125°C

12 3 4 5 6 7

中文翻译

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与HFA06TB120STRR相关器件

型号	品牌	获取价格	描述	数据表
HFA06TB120STRRPBF	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFA08PB120	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08PB120	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA08PB120PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08PB120PBF	INFINEON	获取价格	Ultrafast, SoftRecoveryDiode
HFA08PB120PBF_11	VISHAY	获取价格	HEXFRED Ultrafast Soft Recovery Diode, 8 A
HFA08PB120S	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA08PB60	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA08PB60	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08PB60PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A

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