Datasheet > HBFP0405

HBFP0405

更新时间： 2024-10-28 22:32:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	89K
描述
High Performance Isolated Collector Silicon Bipolar Transistor

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HBFP0405 数据手册

High Performance Isolated

Collector Silicon Bipolar

Transistor

Technical Data

HBFP-0405

Features

Surface Mount Plastic

Package/SOT-343 ( SC-70)

Outline 4T

Description

• Ideal for High Gain, Low

Current Applications

Hewlett Packard’s HBFP-0405 is a

high performance isolated

collector silicon bipolar junction

transistor housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package.

• Typical Performance at

1.8 GHz

Associated Gain of 18 dB

and Noise Figure of 1.2 dB

at 2 V and 2 mA

HBFP-0405 provides an associated

gain of 18 dB, noise figure of

1.2 dB, and P_1dBof 5 dBm at

1.8 GHz. Because of high gain and

low current characteristics,

HBFP-0405 is ideal for cellular/

PCS as well as for C-Band and

Ku-Band applications.

P_1dBof 5 dBm at 2 V and

5 mA

• Miniature 4-lead SC-70

( SOT-343) Plastic Package

Pin Configuration

• Transition Frequency

f_T= 25 GHz

Emitter

Base

Applications

This product is based on a 25 GHz

transition frequency fabrication

process, which enables the

products to be used for high

performance, low noise applica-

tions at 900 MHz, 1.9 GHz,

2.4 GHz, and beyond.

• LNA, Oscillator, Driver

Amplifier, Buffer Amplifier,

and Down Converter for

Cellular and PCS Handsets

and Cordless Telephones

Emitter

Collector

Note:

Package marking provides orientation

and identification.

• Oscillator for TV Delivery

and TVRO Systems up to

12 GHz

12 3 4 5 6 7...10

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