Datasheet > HBFP-0420-TR3

HBFP-0420-TR3

更新时间： 2024-10-28 23:54:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
10页	76K
描述
TRANSISTOR \| BJT \| NPN \| 4.5V V(BR)CEO \| 36MA I(C) \| SOT-343R

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HBFP-0420-TR3 数据手册

High Performance Isolated

Collector Silicon Bipolar

Transistor

Technical Data

HBFP-0420

Features

Surface Mount Plastic

Package/SOT-343 ( SC-70)

Outline 4T

Description

• Ideal for High Gain, Low

Noise Applications

Agilent’s HBFP-0420 is a high

performance isolated collector

silicon bipolar junction transistor

housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package.

• Transition Frequency

f_T= 25 GHz

• Typical Performance at

1.8 GHz

Associated Gain of 17 dB

and Noise Figure of 1.1 dB

at 2 V and 5 mA

HBFP-0420 provides an associated

gain of 17 dB, noise figure of

1.1 dB, and P_1dBof 12 dBm at

1.8 GHz. Because of high gain and

low current characteristics,

HBFP-0420 is ideal for cellular/

PCS handsets as well as for

C-Band and Ku-Band

P_1dBof 12 dBm at 2 V and

20 mA

Pin Configuration

• Can be Used Without

Impedance Matching

Emitter

Base

applications.

Applications

This product is based on a 25 GHz

transition frequency fabrication

process, which enables the

products to be used for high

performance, low noise applica-

tions at 900 MHz, 1.9 GHz,

2.4 GHz, and beyond.

• LNA, Oscillator, Driver

Amplifier, Buffer Amplifier,

and Down Converter for

Cellular and PCS Handsets

and Cordless Telephones

Emitter

Collector

Note:

Package marking provides orientation

and identification.

03 = Device code

• Oscillator for TV Delivery

and TVRO Systems up to

10 GHz

x = Date code character. A new

character is assigned for each

month, year

12 3 4 5 6 7...10

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