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HBFP-0420-TR1 PDF预览

HBFP-0420-TR1

更新时间: 2024-10-28 22:33:15
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
10页 89K
描述
High Performance Isolated Collector Silicon Bipolar Transistor

HBFP-0420-TR1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.14Is Samacsys:N
其他特性:LOW NOISE外壳连接:EMITTER
最大集电极电流 (IC):0.036 A集电极-发射极最大电压:4.5 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:KU BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.162 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):25000 MHz
Base Number Matches:1

HBFP-0420-TR1 数据手册

 浏览型号HBFP-0420-TR1的Datasheet PDF文件第2页浏览型号HBFP-0420-TR1的Datasheet PDF文件第3页浏览型号HBFP-0420-TR1的Datasheet PDF文件第4页浏览型号HBFP-0420-TR1的Datasheet PDF文件第5页浏览型号HBFP-0420-TR1的Datasheet PDF文件第6页浏览型号HBFP-0420-TR1的Datasheet PDF文件第7页 
High Performance Isolated  
Collector Silicon Bipolar  
Transistor  
Technical Data  
HBFP-0420  
Features  
Surface Mount Plastic  
Package/SOT-343 ( SC-70)  
Outline 4T  
Description  
• Ideal for High Gain, Low  
Noise Applications  
Hewlett Packards HBFP-0420 is a  
high performance isolated  
collector silicon bipolar junction  
transistor housed in a 4-lead SC-70  
(SOT-343) surface mount plastic  
package.  
• Transition Frequency  
fT = 25 GHz  
• Typical Performance at  
1.8 GHz  
Associated Gain of 17 dB  
and Noise Figure of 1.1 dB  
at 2 V and 5 mA  
HBFP-0420 provides an associated  
gain of 17 dB, noise figure of  
1.1 dB, and P1dB of 12 dBm at  
1.8 GHz. Because of high gain and  
low current characteristics,  
HBFP-0420 is ideal for cellular/  
PCS handsets as well as for  
C-Band and Ku-Band  
P1dB of 12 dBm at 2 V and  
20 mA  
Pin Configuration  
• Can be Used Without  
Impedance Matching  
Emitter  
Base  
applications.  
Applications  
This product is based on a 25 GHz  
transition frequency fabrication  
process, which enables the  
products to be used for high  
performance, low noise applica-  
tions at 900 MHz, 1.9 GHz,  
2.4 GHz, and beyond.  
• LNA, Oscillator, Driver  
Amplifier, Buffer Amplifier,  
and Down Converter for  
Cellular and PCS Handsets  
and Cordless Telephones  
Emitter  
Collector  
Note:  
Package marking provides orientation  
and identification.  
• Oscillator for TV Delivery  
and TVRO Systems up to  
10 GHz  

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