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HBFP-0405-TR1 PDF预览

HBFP-0405-TR1

更新时间: 2024-10-28 22:33:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
10页 89K
描述
High Performance Isolated Collector Silicon Bipolar Transistor

HBFP-0405-TR1 数据手册

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High Performance Isolated  
Collector Silicon Bipolar  
Transistor  
Technical Data  
HBFP-0405  
Features  
Surface Mount Plastic  
Package/SOT-343 ( SC-70)  
Outline 4T  
Description  
• Ideal for High Gain, Low  
Current Applications  
Hewlett Packards HBFP-0405 is a  
high performance isolated  
collector silicon bipolar junction  
transistor housed in a 4-lead SC-70  
(SOT-343) surface mount plastic  
package.  
• Typical Performance at  
1.8 GHz  
Associated Gain of 18 dB  
and Noise Figure of 1.2 dB  
at 2 V and 2 mA  
HBFP-0405 provides an associated  
gain of 18 dB, noise figure of  
1.2 dB, and P1dB of 5 dBm at  
1.8 GHz. Because of high gain and  
low current characteristics,  
HBFP-0405 is ideal for cellular/  
PCS as well as for C-Band and  
Ku-Band applications.  
P1dB of 5 dBm at 2 V and  
5 mA  
• Miniature 4-lead SC-70  
( SOT-343) Plastic Package  
Pin Configuration  
• Transition Frequency  
fT = 25 GHz  
Emitter  
Base  
Applications  
This product is based on a 25 GHz  
transition frequency fabrication  
process, which enables the  
products to be used for high  
performance, low noise applica-  
tions at 900 MHz, 1.9 GHz,  
2.4 GHz, and beyond.  
• LNA, Oscillator, Driver  
Amplifier, Buffer Amplifier,  
and Down Converter for  
Cellular and PCS Handsets  
and Cordless Telephones  
Emitter  
Collector  
Note:  
Package marking provides orientation  
and identification.  
• Oscillator for TV Delivery  
and TVRO Systems up to  
12 GHz  

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