5秒后页面跳转
HAT1051T PDF预览

HAT1051T

更新时间: 2024-11-11 18:49:55
品牌 Logo 应用领域
日立 - HITACHI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
4页 30K
描述
Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

HAT1051T 数据手册

 浏览型号HAT1051T的Datasheet PDF文件第2页浏览型号HAT1051T的Datasheet PDF文件第3页浏览型号HAT1051T的Datasheet PDF文件第4页 
HAT1051T  
Silicon P Channel Power MOS FET  
High Speed Power Switching  
Target specification  
1st. Edition  
Nov. 1999  
Features  
Low on-resistance  
Capable of 4V gate drive  
Low drive current  
High density mounting  
Outline  
TSSOP-8  
5
6
7
8
4
3
2
1
1
5
8
D
D
D
4
G
1, 5, 8  
Drain  
2, 3, 6, 7 Source  
Gate  
4
S
2
S
3
S
6
S
7

与HAT1051T相关器件

型号 品牌 获取价格 描述 数据表
HAT1053M ETC

获取价格

HAT1054R RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1054R-EL-E RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1055R RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1055RJ RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1059C ETC

获取价格

HAT1065R RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1065R-EL-E RENESAS

获取价格

Silicon P Channel Power MOS FET High Speed Power Switching
HAT1065T RENESAS

获取价格

Silicon P Channel MOS FET High Speed Power Switching
HAT1065T-EL-E RENESAS

获取价格

Silicon P Channel MOS FET High Speed Power Switching