Datasheet > GW35NB60SD

GW35NB60SD

更新时间： 2024-09-13 03:40:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
13页	244K
描述
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT

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中文翻译

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GW35NB60SD 数据手册

STGW35NB60SD

N-CHANNEL 35A - 600V - TO-247

Low Drop PowerMESH™ IGBT

General features

CE(sat)

Type

CES

(Max)@ 25°C @100°C

STGW35NB60SD 600V

< 1.7V 35A

■ LOW ON-VOLTAGE DROP (V

■ LOW INPUT CAPACITANCE

)

CEsat

■ HIGH CURRENT CAPABILITY

TO-247

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

Internal schematic diagram

designed an advanced family of IGBTs, the

™

PowerMESH

IGBTs,

with

outstanding

performances.

Applications

■ LIGHT DIMMER

■ HID

■ WELDING

■ MOTOR CONTROL

■ STATIC RELAYS

Order codes

Sales Type

Marking

GW35NB60SD

Package

Packaging

STGW35NB60SD

TO-247

TUBE

Rev 1

1/13

November 2005

www.st.com

12 3 4 5 6 7...13

中文翻译

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