Datasheet > GW35NC120HD

GW35NC120HD

更新时间： 2024-09-13 03:04:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
13页	356K
描述
35 A - 1200 V - very fast IGBT

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中文翻译

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GW35NC120HD 数据手册

STGW35NC120HD

35 A - 1200 V - very fast IGBT

Features

■ Low on-losses

■ Low on-voltage drop (V

)

CE(sat)

■ High current capability

■ High input impedance (voltage driven)

■ Low gate charge

■ Ideal for soft switching application

TO-247

Application

■ Induction heating

Description

Figure 1.

Internal schematic diagram

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Order code

STGW35NC120HD

Device summary

Marking

Package

TO-247

Packaging

GW35NC120HD

Tube

January 2008

Rev 1

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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