Datasheet > GW39NC60VD

GW39NC60VD

更新时间： 2024-10-30 03:40:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
13页	286K
描述
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

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中文翻译

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GW39NC60VD 数据手册

STGW39NC60VD

N-channel 40A - 600V - TO-247

Very fast switching PowerMESH™ IGBT

PRELIMINARY DATA

General features

I_C

V_CE(sat)

(Max)@ 25°C

Type

STGW39NC60VD 600V

■ Low C / C

V_CES

@100°C

<2.5V

40A

ratio (no cross conduction

IES

RES

susceptibility)

■ High frequency operation

TO-247

■ Very soft ultra fast recovery anti parallel diode

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

Internal schematic diagram

™

PowerMESH IGBTs, with outstanding

performances. The suffix “V” identifies a

familyoptimized for high frequency application.

Applications

■ High frequency inverters, ups

■ Motor drivers

■ Induction heating

Order codes

Part number

Marking

Package

Packaging

STGW39NC60VD

GW39NC60VD

TO-247

Tube

July 2006

Rev 4

1/13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...13

中文翻译

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